发表刊物：Advanced Science
摘要：Recently, metal halide perovskite light-emitting diodes (Pero-LEDs) have achieved significant improvement in device performance, especially for external quantum efficiency (EQE). And EQE is mostly determined by internal quantum efficiency of the emitting material, charge injection balancing factor (eta(c)), and light extraction efficiency (LEE) of the device. Herein, an ultrathin poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (UT-PEDOT:PSS) hole transporter layer is prepared by a water stripping method, and the UT-PEDOT:PSS can enhance eta(c) and LEE simultaneously in Pero-LEDs, mostly due to the improved carrier mobility, more matched energy level alignment, and reduced photon loss. More importantly, the performance enhancement from UT-PEDOT:PSS is quite universal and applicable in different kinds of Pero-LEDs. As a result, the EQEs of Pero-LEDs based on 3D, quasi-3D, and quasi-2D perovskites obtain enhancements of 42%, 87%, and 111%, and the corresponding maximum EQE reaches 17.6%, 15.0%, and 6.8%, respectively.
论文类型：期刊论文
学科门类：工学
一级学科：材料科学与工程
卷号：7
期号：11
页面范围：2000689
ISSN号：2198-3844
是否译文：否
发表时间：2020-04-13
收录刊物：SCI
DOI码：10.1002/advs.202000689
影响因子：14.3
发布期刊链接：https://advanced.onlinelibrary.wiley.com/doi/full/10.1002/advs.202000689