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黄国钦

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一种制备Diamond/SiC复合材料的方法

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Patent Applicant:华侨大学

Disigner of the Invention:XXP,邢波,HGQ

Type of Patent:Invent

Application Number:CN202110791110.4

Service Invention or Not:no

Application Date:2021-07-13

First Author:HGQ

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