+Removal mechanism of 4H-and 6H-SiC substrates (0001 and 0001 over bar ) in mechanical planarization machining
Release time:2023-04-03 Hits:
Affiliation of Author(s):制造工程研究院
Journal:PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART B-JOURNAL OF ENGINEERING MANUFACTURE
Funded by:国家自然科学基金项目
Indexed by:Journal paper
Translation or Not:no
Date of Publication:2019-01-01
First Author:LJ
Correspondence Author:LQF,XXP,Huang Hui,JF