华侨大学罗求发--中文主页-- 【一作SCI】Study on electrochemical mechanical polishing of Silicon Carbide substrates with controllable material removal behavior

罗求发

访问量：

开通时间：..

最后更新时间：..

当前位置：中文主页 >> 科学研究 >> 论文成果

【一作SCI】Study on electrochemical mechanical polishing of Silicon Carbide substrates with controllable material removal behavior

点击次数：

发表刊物：Journal of Materials Research and Technology

页面范围：7212-7223

是否译文：否

发表时间：2026-05-20

收录刊物：SCI

上一条：【一作SCI-二区top】Study on tribochemical reaction behavior induced by abrasives scratching in SiC wafer backside thinning

下一条：【一作SCI】Preparation and properties of conductive fixed abrasive polishing discs for electrochemical mechanical polishing of SiC substrates